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 ZXTP25040DFH 40V SOT23 PNP medium power transistor
Summary
BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m PD = 1.25W Complementary part number ZXTN25040DFH ; VCE(sat) < -85mV @ 1A ;
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * High power dissipation SOT23 package High peak current Low saturation voltage 7V reverse blocking voltage
E
Applications
* * * * MOSFET and IGBT gate driving DC - DC converters Motor drive High side driver
E C B Pinout - top view
Tape width 8mm Quantity per reel 3000
Ordering information
Device ZXTP25040DFHTA Reel size (inches) 7
Device marking
024
Issue 2 - February 2006
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ZXTP25040DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at TA =25C (a) linear derating factor Power dissipation at TA =25C (b) linear derating factor Power dissipation at TA =25C (c) linear derating factor Power dissipation at TA =25C (d) linear derating factor Operating and storage temperature range Symbol VCBO VCEO VECO VEBO IC ICM PD Limit -45 -40 -3 -7 -3 -9 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V A A W mW/C W mW/C W mW/C W mW/C C
PD
PD
PD
Tj, Tstg
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5sec.
Issue 2 - February 2006
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ZXTP25040DFH
Characteristics
Issue 2 - February 2006
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ZXTP25040DFH
Electrical characteristics (at TAMB = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCBO BVCEO BVECO BVEBO ICBO IEBO Min. -45 -40 -3 -7 Typ. -75 -65 -8.7 -8.2 <-1 <-1 -170 -65 -165 Base-emitter saturation VBE(sat) voltage Base-emitter turn-on voltage VBE(on) Static forward current transfer ratio hFE 300 200 30 Transition frequency Output capacitance Turn-on time Turn-off time fT COBO t(on) t(off) -930 -830 450 300 60 270 17.4 75.5 320
300 s; duty cycle 2%.
Max.
Unit V V V V
Conditions IC = -100 A IC = -10mA (*) IE = -100uA (*) IE = -100 A VCB = -36V VCB = -36V, Tamb= 100C VEB = -5.6V IC = -1A, IB = -20mA (*) IC = -1A, IB = -100mA (*) IC = -3A, IB = -300mA (*) IC = -3A, IB = -300mA (*) IC = -3A, VCE = -2V (*) IC = -10mA, VCE = -2V (*) IC = -1A, VCE = -2V (*) IC = -3A, VCE = -2V (*)
-50 -20 -50 -260 -85 -220 -1000 -900 900
nA A nA mV mV mV mV mV
Collector-emitter saturation VCE(sat) voltage
MHz pF ns ns
IC = -50mA, VCE = -10V f = 100MHz VCB = -10V, f = 1MHz (*) VCC = -15V. IC = -750mA, IB1 = IB2= -15mA.
NOTES: (*) Measured under pulsed conditions. Pulse width
Issue 2 - February 2006
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ZXTP25040DFH
Typical characteristics
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ZXTP25040DFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - February 2006
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